Monolayer Transistor SRAMs

Coulomb blockade in monolayer MoS2 single electron transistor.

Substantial effort has been dedicated to understand the intrinsic electronic properties of molybdenum disulfide (MoS2). However, electron transport study on monolayer MoS2 has been challenging to date, especially at low temperatures due to large metal/semiconductor junction barriers. Herein, we report the fabrication and characterization of the monolayer MoS2 single-electron transistor. High pe...

Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor.

The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2 , results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.

Leakage Power Estimation in SRAMs

In this paper we propose analytical models for estimating the leakage power in CMOS based SRAM designs. We identify the transistors that contribute to the leakage power in each SRAM sub-circuit as a function of the operation (read/write/idle) on the SRAM and develop parameterized leakage power models in terms of the high level design parameters and transistor widths. The models take number of r...

Redundancy Yield Model for SRAMS

This paper describes a model developed to calculate the number of redundant good die per wafer. A block redundancy scheme is used here, where the entire defective memory subarray is replaced by a redundant element. A formula is derived to calculate the amount of improvement expected after redundancy. This improvement is given in terms of the ratio of the overall good die per wafer to the origin...

Channel Length Modulation Effect on Monolayer Graphene Nanoribbon Field Effect Transistor